Group IV-B organometallic compound, and method for preparing same
US8946096B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Mar 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to novel 4B group metalorganic compounds represented by following formula I and the preparation thereof. Specifically, the present invention relates to a thermally and chemically stable 4B group organo-metallic compound utilized in chemical vapor deposition (CVD) or atomic layer deposition (ALD), and the preparation thereof. A 4B group metalorganic compound prepared according to the present invention volatiles easily and is stable at high temperature, and can be used effectively in manufacturing 4B group metal oxide thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.