Semiconductor image sensor module and method of manufacturing the same
US8946610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2006 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | May 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a CMOS type semiconductor image sensor module in which the aperture ratio of the pixel is improved and at the same time chip use efficiency is attempted to be improved and furthermore, simultaneous shuttering of all the pixels is made possible, and a method of manufacturing the same. The semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip including an image sensor in which a plurality of pixels, each constituted by a photoelectric conversion element and transistors, are arranged, and a second semiconductor chip including an A/D converter array. Preferably, a third semiconductor chip including a memory element array is further laminated. Also, a semiconductor image sensor module of the present invention is constituted by laminating a first semiconductor chip provided with the aforesaid image sensor and a fourth semiconductor chip provided with an analog type nonvolatile memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.