Semiconductor device
US8946705B2 · kind B2 · utility
5Cited by
0References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2010 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jun 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.