Semiconductor light emitting device
US8946751B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Aug 30, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
Abstract
A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer sequentially stacked on a substrate. A first electrode is disposed on a portion of the first conductivity-type semiconductor layer. A current diffusion layer is disposed on the second conductivity-type semiconductor layer and includes an opening exposing a portion of the second conductivity-type semiconductor layer. A second electrode covers a portion of the current diffusion layer and the exposed portion of the second conductivity-type semiconductor layer, wherein the portion of the current diffusion layer is near the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.