Patent · US Active

Light emitting diode and light emitting diode package

US8946762B2 · kind B2 · utility

0Cited by
2References
10Claims
0Family size

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Key dates

Filing dateAug 20, 2013
Grant dateFeb 3, 2015
Priority date
Expiry dateAug 20, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/819

Abstract

A light emitting diode includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on a substrate, and a first electrode connected to the first semiconductor layer. The first electrode includes an edge electrode including first and second edge portions opposite to each other, and a line electrode including first and second line portions respectively extending from the first and second edge portions. The edge electrode has a closed loop-shape. A distance between the first line portion and the second edge portion is equal to or less than a quarter of a length of the first line portion. A distance between the second line portion and the first edge portion is equal to or less than a quarter of a length of the second line portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.