Method for manufacturing semiconductor memory device and semiconductor memory device
US8946809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Sep 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
According to one embodiment, a method is disclosed for manufacturing a semiconductor memory device. The method includes forming a first stopper film forming a lower gate layer, making a recess in the lower gate layer, filling a sacrificial film into the recess, forming a second stopper film, making an opening in the second stopper film, forming a stacked body. The stacked body includes electrode films and insulating films. The method includes, making a slit in the stacked body, making a hole in the stacked body, removing the sacrificial film via the hole, forming a memory film including a charge storage film. The method includes forming a channel body on a side wall of the memory film. An etching rate of the first stopper film and the second stopper film is lower than an etching rate of the electrode films and the insulating films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.