Patent · US Active

Decoupling circuit and semiconductor integrated circuit

US8947134B2 · kind B2 · utility

1Cited by
12References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 5, 2013
Grant dateFeb 3, 2015
Priority date
Expiry dateMar 20, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K19/0948
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A decoupling circuit includes an inverter. The inverter includes i (i is an integer of 1 or more) PMOS transistors each having a first gate electrode, and j (j is an integer of 0 or more) PMOS transistors each having a second gate electrode. The inverter includes m (m is an integer of 1 or more) NMOS transistors each having a third gate electrode, and n (n is an integer of 0 or more) NMOS transistors each having a fourth gate electrode. The first to fourth gate electrodes are coupled to an input end of the inverter. A total area of the first and second gate electrodes is different from a total area of the third and fourth gate electrodes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.