High-efficiency driving stage for phase change non-volatile memory devices
US8947906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2013 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0069
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A driving stage for a phase change non-volatile memory device may have an output driving unit which supplies an output driving current during an operation of programming of at least one memory cell. A driving-control unit receives an input current and generates at output a first control signal that controls supply of the output driving current by the output driving unit in such a way that a value of this current has a desired relation with the input current. A level-shifter element, set between the output of the driving-control unit and a control input of the output driving unit, determines a level shift of the voltage of the first control signal so as to supply to the control input of the output driving unit a second control signal, having a voltage value that is increased with respect to, and is a function of, the first control signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.