Semiconductor laser device and method of fabricating the same
US8948224B2 · kind B2 · utility
7Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2012 |
| Grant date | Feb 3, 2015 |
| Priority date | — |
| Expiry date | Jan 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2272
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.