Silicon carbide powder for producing silicon carbide single crystal and a method for producing the same
US8951638B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 15, 2013 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide powder for the production of a silicon carbide single crystal has an average particle diameter of 100 μm or more and 700 μm or less and a specific surface area of 0.05 m2/g or more and 0.30 m2/g or less. A method for producing a silicon carbide powder for the production of the silicon carbide single crystal including sintering a silicon carbide powder having an average particle diameter of 20 μm or less under pressure of 70 MPa or less at a temperature of 1900° C. or more and 2400° C. or less and in a non-oxidizing atmosphere, thereby obtaining a sintered body having a density of 1.29 g/cm3 or more; adjusting particle size by means of pulverization of the sintered body; and removing impurities by means of an acid treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.