Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof

US8952242B2 · kind B2 · utility

Assignees

• Rochester Institute of Technology · US
• The National Aeronautics and Space Administration · US

Inventors

• Ryne P. Raffaele · Honeoye Falls, US
• David Wilt · Albuquerque, US

Key dates

• Filing date: Dec 3, 2009
• Grant date: Feb 10, 2015
• Expiry date: Feb 25, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.