Semiconductor devices including an electrically percolating source layer and methods of fabricating the same

US8952361B2 · kind B2 · utility

Assignee

• University of Florida Research Foundation, INC. · US

Inventors

• Andrew G. Rinzler · Newberry, US
• Bo Liu · San Diego, US
• Mitchell Austin McCarthy · Gainesville, US

Key dates

• Filing date: Mar 4, 2011
• Grant date: Feb 10, 2015
• Expiry date: Dec 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K85/221
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Various embodiments are provided for semiconductor devices including an electrically percolating source layer and methods of fabricating the same. In one embodiment, a semiconductor device includes a gate layer, a dielectric layer, a memory layer, a source layer, a semiconducting channel layer, and a drain layer. The source layer is electrically percolating and perforated. The semiconducting channel layer is in contact with the source layer and the memory layer. The source layer and the semiconducting channel layer form a gate voltage tunable charge injection barrier.