Semiconductor device and electronic device
US8952380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Apr 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film containing silicon, an oxide semiconductor film over the insulating film, a gate insulating film containing silicon over the oxide semiconductor film, a gate electrode which is over the gate insulating film and overlaps with at least the oxide semiconductor film, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film. In the semiconductor device, the oxide semiconductor film which overlaps with at least the gate electrode includes a region in which a concentration of silicon distributed from an interface with the insulating film is lower than or equal to 1.1 at. %. In addition, a concentration of silicon contained in a remaining portion of the oxide semiconductor film except the region is lower than the concentration of silicon contained in the region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.