Patent · US Active

Light emitting device including a fluorescent material layer

US8952409B2 · kind B2 · utility

2Cited by
0References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 27, 2013
Grant dateFeb 10, 2015
Priority date
Expiry dateFeb 27, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8514

Abstract

According to one embodiment, a semiconductor light-emitting device includes a semiconductor light-emitting layer, a pair of electrodes, a fluorescent material layer and a chromaticity adjusting layer. The semiconductor light-emitting layer emits first light. The pair of electrodes is connected to the semiconductor light-emitting layer. The fluorescent material layer covers at least a center portion of the semiconductor light-emitting layer, and contains a fluorescent material to absorb the first light and radiate second light. The chromaticity adjusting layer covers at least a peripheral portion of the semiconductor light-emitting layer, is exposed to outside, and contains a fluorescent material with a concentration lower than a concentration of the fluorescent material in the fluorescent material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.