RF CMOS transistor design

US8952424B2 · kind B2 · utility

Assignee

• CAMBRIDGE SILICON RADIO LIMITED · GB

Inventor

• Rainer Herberholz · Cambridge, GB

Key dates

• Filing date: Jul 23, 2013
• Grant date: Feb 10, 2015
• Expiry date: Jul 23, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An improved RF CMOS transistor design is described. Local, narrow interconnect lines, which are located substantially above the active area of the transistor, are each connected to either a source terminal or a drain terminal. The source and the drain terminal are arranged orthogonally to the local interconnect lines and each terminal is significantly wider than a local interconnect line. In an example, the local interconnect lines are formed in a first metal layer and the source and drain terminals are formed in one or more subsequent metal layers.