Solid-state image sensor, method of manufacturing the same, and imaging system
US8952433B2 · kind B2 · utility
11Cited by
10References
10Claims
0Family size
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Key dates
| Filing date | Nov 3, 2011 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Aug 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
Abstract
A solid-state image sensor includes a pixel region and peripheral circuit region arranged on a semiconductor substrate. The pixel region includes pixels. Each pixel includes a photoelectric conversion element and an amplification MOS transistor that outputs a signal corresponding to charges of the photoelectric conversion element to a column signal line. The peripheral circuit region includes a circuit that drives the pixel or processes the signal output to the column signal line. A resistance of a source region of the amplification MOS transistor is lower than a resistance of a drain region of the amplification MOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.