Via connection structures, semiconductor devices having the same, and methods of fabricating the structures and devices
US8952543B2 · kind B2 · utility
10Cited by
10References
25Claims
0Family size
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Key dates
| Filing date | Dec 18, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Feb 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a lower layer, an insulating layer on a first side of the lower layer, an interconnection structure in the insulating layer, a via structure in the lower layer. The via structure protrudes into the insulating layer and the interconnection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.