Memory with variable strength sense amplifier
US8953395B2 · kind B2 · utility
9Cited by
18References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2012 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | May 4, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of a memory are disclosed that may reduce the likelihood of a misread while reading a weak data storage cell. The memory column may include a number of data storage cells, a column multiplexer, and a sense amplifier. The sense amplifier may have two or more gain elements which can be individually selected to adjust the gain level of the sense amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.