Low-loss superconducting devices

US8954125B2 · kind B2 · utility

Assignees

• International Business Machines Corporation · US
• The United States of America, as represented by the Secretary of Commerce, The National Institute of Standards · US

Inventors

• Antonio D. Corcoles Gonzalez · Mount Kisco, US
• Jiansong Gao · Boulder, US
• Dustin A. Hite · Boulder, US
• George A. Keefe · Somers, US
• David Pappas · Boulder, US
• Mary E. Rothwell · Ridgefield, US
• Matthias Steffen · Somers, US
• Chang C. Tsuei · Chappaqua, US
• Michael Robert Vissers · Erie, US
• David S. Wisbey · Lafayette, US

Key dates

• Filing date: Jul 28, 2011
• Grant date: Feb 10, 2015
• Expiry date: Apr 28, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N69/00
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes forming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer.