Apparatus, system, and method for improving read endurance for a non-volatile memory
US8954650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2011 |
| Grant date | Feb 10, 2015 |
| Priority date | — |
| Expiry date | Dec 11, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7205
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described are an apparatus, system, and method for improving read endurance for a non-volatile memory (NVM). The method comprises: determining a read count corresponding to a block of NVM; identifying whether the block of NVM is a partially programmed block (PPB); comparing the read count with a first threshold when it is identified that the block is a PPB; and when identified otherwise, comparing the read count with a second threshold, wherein the first threshold is smaller than the second threshold. The method further comprises: identifying a block that is a PPB; determining a first word line corresponding to un-programmed page of the PPB; and sending the first word line to the NVM, wherein the NVM to apply: a first read voltage level to word lines corresponding to the un-programmed pages of the PPB, and a second read voltage level to word lines corresponding to programmed pages of the PPB.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.