System and apparatus to facilitate physical vapor deposition to modify non-metal films on semiconductor substrates
US8956516B2 · kind B2 · utility
0Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2009 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Apr 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3322
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and a system for implementing arrangements of magnetic field generators configured to facilitate physical vapor deposition (“PVD”) and/or controlling impedance matching associated with a non-metal-based plasma used to modify a non-metal film, such as a chalcogenide-based film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.