Exposure tolerance estimation method and method for manufacturing semiconductor device
US8956791B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Sep 16, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70641
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to one embodiment, an exposure tolerance estimation method is disclosed. The method can include setting a plurality of regions along a first surface of a substrate. The method can form a plurality of patterns for estimation by performing exposure on each of the regions using at least three levels of exposure condition using an exposure mask. The method can measure dimensions of the patterns for estimation and find relationships between the exposure condition and the dimensions. The method can select a first region from the regions. In the first region, a first dimension of a first pattern for estimation formed by exposure using a first exposure condition of an intermediate level out of the at least three levels falls within a previously set range. In addition, the method can calculate an exposure tolerance from a relationship between the first exposure condition and the first dimension.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.