Method and device for producing a semiconductor layer

US8956906B2 · kind B2 · utility

Assignee

• Soliton, LLC · US

Inventors

• Hendrik Zachmann · Leipzig, DE
• Karsten Otte · Leipzig, DE
• Horst Neumann · Ludwigshafen, DE
• Frank Scholze · Brandis, DE
• Lutz Pistol · Leipzig, DE

Key dates

• Filing date: Feb 22, 2010
• Grant date: Feb 17, 2015
• Expiry date: Aug 29, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The invention relates to a method and a device for producing a semiconductor layer. The problem addressed is that of increasing the deposition rate of the layer constituents and significantly improving the efficiency of a resulting solar cell. At the same time, the material costs are intended to be reduced. The problem is solved by virtue of the fact that, in a vacuum chamber, metal evaporator sources release Cu, In and/or Ga or the chalcogenide compounds, the latter are focused as metal vapor jets onto the substrate, and Se and/or S emerge(s) in an ionized fashion from a chalcogen low-energy wide-beam ion source and this beam is focused onto the surface of the substrate in such a way that it overlaps the metal vapor jets. A device for carrying out the method is described.