Method for the production of a substrate comprising embedded layers of getter material
US8956958B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 31, 2011 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Oct 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a substrate with buried layers of getter material, including: making a first stack including one layer of a first getter material, arranged on a first support; making a second stack including one layer of a second getter material, arranged on a second support; and bringing the first stack into contact with the second stack and performing thermocompression, the layers of the first and of the second getter material being arranged between the first and the second support, at a temperature greater than or equal to a lowest temperature among thermal activation temperatures of the first and of the second getter material, to bond the layers of the first and second getter materials together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.