Semiconductor device and fabrication method
US8956964B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Nov 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and fabrication methods are provided. A fin can be formed on a semiconductor substrate, a gate can be formed across the fin, and sidewall spacers can be formed across the fin on both sides of the gate. A dummy contact can be formed across the fin and on each of the both sides of the sidewall spacers. After forming an interlayer dielectric layer on the semiconductor substrate, the dummy contact can be removed to form a contact trench. The dummy contact is made of a material having an etch selectivity sufficiently higher than the fin such that the removing of the dummy contact generates substantially no damage to the fin. A conductive material can be filled in the contact trench to form a trench metal contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.