Multijunction solar cell with two step diffusion region in substrate

US8957306B2 · kind B2 · utility

Inventors

• Mark A. Stan · Albuquerque, US
• Nein-Yi Li · Sunnyvale, US
• Frank A. Spadafora · Albuquerque, US
• Hong Q. Hou · Albuquerque, US
• Paul R. Sharps · Albuquerque, US
• Navid S. Fatemi · University Heights, US

Key dates

• Filing date: Mar 3, 2008
• Grant date: Feb 17, 2015
• Expiry date: Jun 4, 2030

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/544
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A solar cell having a first subcell including a germanium (Ge) substrate having a diffusion region doped with n-type dopants including phosphorus and arsenic, wherein the upper portion of such diffusion region has a higher concentration of phosphorus (P) atoms than arsenic (As) atoms, and a second subcell including a layer of either gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) disposed over the substrate.