Patent · US Active

Phase-change memory cell

US8957400B2 · kind B2 · utility

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6Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Luca Perniola · Saint-Égrève, FR
Giovanni Betti Beneventi · Modena, IT

Key dates

Filing date	Jan 14, 2013
Grant date	Feb 17, 2015
Priority date	—
Expiry date	Jan 14, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/73
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The memory cell includes a memory area which is formed in a phase-change material pattern based on chalcogenide. An electric p/n-type junction is series-connected between electrodes. The p/n junction is formed in a crystalline area by the interface between first and second doped areas of the phase-change material pattern. The memory area is formed in one of the two doped areas, at a distance from the junction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.