Thin film transistor, manufacturing method of the same and electronic equipment
US8957416B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Apr 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a thin film transistor including: a channel layer made of a crystalline oxide semiconductor having a bixbyte structure, in which (222) planes of the channel layer are roughly parallel to the carrier travel direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.