Light emitting diode with wavelength conversion layer
US8957429B2 · kind B2 · utility
3Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2012 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Feb 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0361
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device comprises a base, a light-emitting unit comprising a semiconductor stack disposed on the base, and a wavelength conversion layer covering the light-emitting unit, wherein the wavelength conversion layer does not physically contact the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.