Electrical fuse and related applications
US8957482B2 · kind B2 · utility
9Cited by
82References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2010 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | May 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In various embodiments, the fuse is formed from silicide and on top of a fin of a fin structure. Because the fuse is formed on top of a fin, its width takes the width of the fin, which is very thin. Depending on implementations, the fuse is also formed using planar technology and includes a thin width. Because the width of the fuse is relatively thin, a predetermined current can reliably cause the fuse to be opened. Further, the fuse can be used with a transistor to form a memory cell used in memory arrays, and the transistor utilizes FinFET technology.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.