High-voltage integrated metal capacitor and fabrication method
US8957500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2012 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/70
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A high-voltage metal capacitor with easy integration into existing semiconductor manufacturing processes can provide isolation capacitors up to several kilovolts. The capacitor includes a support layer with internal structure, including a lower place, a bond pad on the support layer, an upper plate disposed on the support layer, the upper plate being arranged above the lower plate, a dielectric layer, at least part of which is between the lower and upper plates, and a passivation layer, at least part of which covers at least part of the upper plate and part of the dielectric layer. A first opening extends from the surface through the passivation and dielectric layers to the lower plate, and a second opening extends from the surface through the passivation layer to the upper plate. A method of manufacturing the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.