Device substrate and fabrication method thereof
US8957505B2 · kind B2 · utility
3Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Mar 1, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fabricating method of a device substrate including the following procedures is provided. First, a substrate is provided and a patterned structure is formed on the substrate, wherein the patterned structure includes a plurality of openings. Then, a protective layer is formed on the patterned structure, wherein the protective layer does not fully fill the openings of the patterned structure such that a gap is existed between the protective layer and the patterned structure. Later, a device layer is formed on the protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.