Patent · US Active

Sensor

US8957687B2 · kind B2 · utility

3Cited by

2References

13Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Axel Nackaerts · Haasrode, BE
Matthias Merz · Leuven, BE
Youri Victorovitch Ponomarev · Leuven, BE

Key dates

Filing date	Apr 26, 2012
Grant date	Feb 17, 2015
Priority date	—
Expiry date	Jan 25, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/4148
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to an electrochemical sensor integrated on a substrate, the electrochemical sensor including: a field effect transistor integrated on the substrate and having a source, gate and drain connections, said gate of the field effect transistor including: a sensing gate conductively coupled to a sensing electrode; and a bias gate, wherein the sensing gate is capacitively coupled to the bias gate and the bias gate is capacitively coupled to the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.