Magnetic memory
US8958241B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2013 |
| Grant date | Feb 17, 2015 |
| Priority date | — |
| Expiry date | Sep 9, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory according to an embodiment includes: a magnetic nanowire; first insulating layers provided on a first surface of the magnetic nanowire, each of the first insulating layers having a first and second end faces, a thickness of the first insulating layer over the first end face being thicker than a thickness of the first insulating layer over the second end face; first electrodes on surfaces of the first insulating layers opposite to the first surface; second insulating layers on the second surface of the magnetic nanowire, each of the second insulating layers having a third and fourth end faces, a thickness of the second insulating layer over the third surface being thicker than a thickness of the second insulating layer over the fourth end face; and second electrodes on surfaces of the second insulating layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.