Plant and method for producing a semiconductor film
US8961745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2014 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3429
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (α) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced. The cylindrical member (4) is provided with heating means of a portion of the side surface thereof that is from time to time in the evaporation zone (2b), so that the elements of the groups 11 and 13 previously deposited on t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.