CMP compositions with low solids content and methods related thereto
US8961807B2 · kind B2 · utility
5Cited by
19References
21Claims
0Family size
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Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Apr 5, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08L33/26
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Disclosed are a polishing composition and method of polishing a substrate. The composition has low-load (e.g., up to about 0.1 wt. %) of abrasive particles. The polishing composition also contains water and at least one anionic surfactant. In some embodiments, the abrasive particles are alpha alumina particles (e.g., coated with organic polymer). The polishing composition can be used, e.g., to polish a substrate of weak strength such as an organic polymer. An agent for oxidizing at least one of silicon and organic polymer is included in the composition in some embodiments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.