Method of making silicon anode material for rechargeable cells
US8962183B2 · kind B2 · utility
4Cited by
45References
31Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 7, 2010 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | May 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon anode material for rechargeable cells includes providing a metal matrix that includes no more than 30 wt % of silicon, including silicon structures dispersed therein. The metal matrix is at least partially etched to at least partially isolate the silicon structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.