Method for producing a semiconductor chip emitting radiation, semiconductor chip emitting radiation, and component emitting radiation

US8962361B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Kirstin Petersen · Regensburg, DE
• Frank Baumann · Regensburg, DE
• Dominik Eisert · Regensberg, DE
• Hailing Cui · Regensburg, DE

Key dates

• Filing date: Nov 23, 2011
• Grant date: Feb 24, 2015
• Expiry date: Dec 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/0361

Abstract

A method is provided for producing a radiation-emitting semiconductor chip, in which a first wavelength-converting layer is applied over the radiation exit face of a semiconductor body. The application method is selected from the following group: sedimentation, electrophoresis. In addition, a second wavelength-converting layer is applied over the radiation exit face of the semiconductor body. The second wavelength-converting layer is either produced in a separate method step and then applied or the application method is sedimentation, electrophoresis or printing. Furthermore, a radiation-emitting semiconductor chip and a radiation-emitting component are provided.