Self-aligned well structures for low-noise chemical sensors
US8962366B2 · kind B2 · utility
65Cited by
252References
11Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 28, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4148
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.