Pixelated imager with motfet and process
US8962377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Aug 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
A method of fabricating a pixelated imager includes providing a substrate with bottom contact layer and sensing element blanket layers on the contact layer. The blanket layers are separated into an array of sensing elements by trenches isolating adjacent sensing elements. A sensing element electrode is formed adjacent each sensing element overlying a trench and defining a TFT. A layer of metal oxide semiconductor (MOS) material is formed on a dielectric layer overlying the electrodes and on an exposed upper surface of the blanket layers defining the sensing element adjacent each TFT. A layer of metal is deposited on each TFT and separated into source/drain electrodes on opposite sides of the sensing element electrode. The metal forming one of the S/D electrodes contacts the MOS material overlying the exposed surface of the semiconductor layer, whereby each sensing element in the array is electrically connected to the adjacent TFT by the MOS material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.