Patent · US Active

Photodiode and method for making the same

US8962378B2 · kind B2 · utility

1Cited by
4References
12Claims
0Family size

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Key dates

Filing dateJul 16, 2012
Grant dateFeb 24, 2015
Priority date
Expiry dateJul 16, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/50

Abstract

A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.