Method for manufacturing fan-out lines on array substrate
US8962404B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 12, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Nov 12, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method for manufacturing fan-out lines on an array substrate is disclosed. The fan-out lines comprise an amorphous silicon layer, an ohmic contact layer and a source-drain electrode layer disposed on a gate insulating layer. The manufacturing processes can be conducted by forming a first layer of photoresist on the source-drain electrode layer and performing a half-exposure development process on the first layer of photoresist; etching the amorphous silicon layer, the ohmic contact layer and the source-drain electrode layer by an etching process; removing the first layer of photoresist; forming a second layer of photoresist and performing full-exposure development process on the second layer of photoresist; and etching the amorphous silicon layer by etching process to form the fan-out lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.