Transparent conductors for silicon solar cells
US8962979B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2006 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jul 6, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic device is provided in which a contact structure is formed having a plurality of heavily doped semi-conductor channels formed on a surface of a region to be contacted. The heavily doped semiconductor channels are of the same dopant polarity as the region to be contacted, and form lateral conduction paths across the surface of the region to be contacted. Contact metallization comprising conductive fingers are formed over the surface of the region to be contacted, and each conductive finger crosses at least some of the heavily doped channels to make electrical contact therewith. The contact structure is formed by forming a layer of dopant source material over the surface to be contacted, and laser doping heavily doped channels in the surface to be contacted. The contact metallization is then formed as conductive fingers formed over the surface to be contacted and may be screen printed, metal plated or may be formed as buried contacts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.