Patent · US Active

Transparent conductors for silicon solar cells

US8962979B2 · kind B2 · utility

0Cited by
2References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 7, 2006
Grant dateFeb 24, 2015
Priority date
Expiry dateJul 6, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A photovoltaic device is provided in which a contact structure is formed having a plurality of heavily doped semi-conductor channels formed on a surface of a region to be contacted. The heavily doped semiconductor channels are of the same dopant polarity as the region to be contacted, and form lateral conduction paths across the surface of the region to be contacted. Contact metallization comprising conductive fingers are formed over the surface of the region to be contacted, and each conductive finger crosses at least some of the heavily doped channels to make electrical contact therewith. The contact structure is formed by forming a layer of dopant source material over the surface to be contacted, and laser doping heavily doped channels in the surface to be contacted. The contact metallization is then formed as conductive fingers formed over the surface to be contacted and may be screen printed, metal plated or may be formed as buried contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.