Infrared light sensor having a high signal voltage and a high signal/noise ratio
US8963087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Mar 1, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/0846
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared light sensor for an infrared light detector (1), including a substrate membrane section (2) and at least two sensor chips (7 to 10), which are fastened next to each other on the substrate membrane section (2) and each comprise a layer element (11) which is produced from pyroelectrically sensitive material and is electrically contacted by a base electrode (12) and a head electrode (13) and is arranged in such that there is a voltage difference in each case between the head electrode (13) and the base electrode (12) of each layer element (11) when the layer elements (11) are irradiated with infrared light; and a coupling line (14 to 16) in each case for two adjacently arranged sensor chips (7 to 10), the coupling line coupling the head electrode (13) of the one sensor chip (7 to 9) and the base electrode (12) of the other sensor chip (8 to 10) to each other in an electrically conductive manner so that the layer elements (11) of the sensor chips (7 to 10) are connected in a series circuit, which has one of the base electrodes (17) at one end thereof and one of the head electrodes (18) at the other end thereof, at which a total voltage difference of the series circuit can b…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.