Semiconductor nanocrystal, method of manufacture thereof and articles including the same
US8963119B2 · kind B2 · utility
19Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2011 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Apr 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor nanocrystal including a core including ZnSe, ZnTe, ZnS, ZnO, or a combination comprising at least one of the foregoing, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; and a first layer disposed on the core, the first layer including a Group III-V semiconductor, wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.