Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element
US8963165B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2011 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Dec 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/87
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.