Patent · US Active

Chemical sensor with sidewall spacer sensor surface

US8963216B2 · kind B2 · utility

67Cited by
253References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 2013
Grant dateFeb 24, 2015
Priority date
Expiry dateMay 11, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/4145
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.