Trench power device and semiconductor structure thereof
US8963235B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Oct 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0297
Abstract
A semiconductor structure of a trench power device comprises a base, an insulating layer, and a source conductive layer. The base includes a first trench etched from the top surface thereof, and two portions of the top surface arranged at two opposite sides of the first trench are respectively defined as two top contacting surfaces. Part of the first trench is filled with the insulating layer, and two inner walls of a non-filled portion of the first trench are respectively defined as two side contacting surfaces without contacting the insulating layer. The source conductive layer is embedded in the insulating layer. Thus, when a metallic layer is integrally formed on the semiconductor structure and connects the top contacting surfaces and the side contacting surfaces, the top contacting surfaces and the side contacting surfaces are configured to be a Schottky barrier interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.