Photoelectric converter having chalcopyrite compound semiconductor layer partitioned into pixels and shielding layer arranged around each pixel
US8963272B2 · kind B2 · utility
6Cited by
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26Claims
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Key dates
| Filing date | Jun 14, 2013 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Jun 14, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photoelectric converter according to the present invention includes a substrate, a lower electrode layer arranged on the substrate, a compound semiconductor layer of a chalcopyrite structure arranged on the lower electrode layer to cover the lower electrode layer and partitioned into a plurality of pixels, a transparent electrode layer arranged on the compound semiconductor layer, and a shielding layer arranged around each of the pixels on the compound semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.