Resistive-switching device capable of implementing multiary addition operation and method for multiary addition operation
US8963275B2 · kind B2 · utility
1Cited by
8References
8Claims
0Family size
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Key dates
| Filing date | Dec 6, 2012 |
| Grant date | Feb 24, 2015 |
| Priority date | — |
| Expiry date | Dec 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive-switching random access memory device includes a memory cell disposed between a bit line and a word line, the memory cell having a resistive-switching element (40) and a Schottky diode (30). The Schottky diode (30) and the resistive-switching element (40) are connected in series. The Schottky diode (30) includes a metal layer and a semiconductor layer contacting each other. An interface between the metal layer and the semiconductor layer has a non-planar shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.